N-Channel Junction Field Effect Transistor
(276-2035)                  Specifications            Faxback Doc. # 31798

Drain Gate Voltage (Absolute Max. Rating).............................30 V
Drain Source Voltage (Absolute Max. Rating)...........................30 V
Gate Source Voltage..................................................-30 V
Gate Current.........................................................10 mA
Total Power Dissipation (Ta=25 degrees C or less)...................300 mW
Operating Junction and Storage Temperature............-65 to 175 degrees C
Gate Cutoff Current...................0.5 micro A (Ta=150 degrees C--Max.)
Zero Gate Voltage Drian Current....4 mA (Min.); 10 mA (Typ.); 20 mA (Max.)
Gate Source Voltage.................1 V (Min.); 3.2 V (Typ.); 7.5 V (Max.)
Gate Source Cutoff Voltage......................3.5 V (Typ.); 8.0 V (Max.)
Forward Transfer Admittance........3.5 mSiemens (Min.); 5 mSiemens (Typ.);
                                   6.5 mSiemens (Max.)
Output Admittance.........20 micro Siemens (Typ.); 35 micro Siemens (Max.)
                           at 1 kHz
Input Capacitance......................3.5 pF (Typ.); 6 pF (Max.) at 1 MHz
Feedback Capacitance...................0.7 pF (Typ.); 2 pF (Max.) at 1 MHz
Forward Transfer Admittance.....3.2 mSiemens (Min.); 5.5 mSiemens (Typ.); 
                                at 200 MHz
Input Conductance.......250 micro Siemens (Typ.); 800 micro Siemens (Max.)
                        at 200 MHz
Output Conductance.......60 micro Siemens (Typ.); 200 micro Siemens (Max.)
                         at 200 MHz
Spot Noise Figure......1 dB (Typ.); 2.5 dB (Max.) at 100 MHz and RG=1k ohm
Power Gain.........................................12 dB (Typ.) at 400 MHz
Equivalent Noise Input Voltage...............8 nV/square root Hz at 100 Hz
"ON" Resistance............................................170 ohms (Typ.)

Specifications are typical; individual units might vary.  Specifications
are subject to change without notice.


(IR-04/05/96)