N-Channel Field Effect Transistor
(276-2062)                  Specifications            Faxback Doc. # 31803

Absolute Maximum Ratings:

Drain Source Voltage..................................................25 V
Drain Gate Voltage....................................................25 V
Gate Source Voltage...................................................25 V
Gate Current.........................................................10 mA
Total Power Dissipation.............................................310 mW
Operating Junction and Storage Temperature...........-55 to +150 Degrees C

Electrical Characteristics (Ta=25 Degrees C):

Gate Source Breakdown Voltage..................................25 V (Min.)
Gate Reverse Current..............................................2 nano-A
Gate Source Cutoff Current......................................8 V (Max.)
Gate Source Voltage.............................0.5 V (Min.); 7.5 V (Max.)
Zero Gate Voltage Current........................2 mA (Min.); 20 mA (Max.)
Forward Transfer Admittance..........2000 micro Siemens;7500 micro Siemens
                                     at 1 kHz
Input Capacitance.....................................7 pF (Max.) at 1 MHz
Reverse Transfer Capacitance..........................3 pF (Max.) at 1 MHz

Specifications are typical; individual units might vary.  Specifications
are subject to change without notice.


(IR-04/08/96)