N-Channel Field Effect Transistor
(276-2072)                  Specifications            Faxback Doc. # 31806

Absolute Maximum Ratings

Drain Source Voltage.................................................100 V
Drain Gate Voltage...................................................100 V
Continuous Drain Current...............................................4 A
Pulsed Drain Current..................................................16 A
Gate Source Voltage...................................................20 V
Max. Power Dissipation................................................20 W


Electrical Specifications

Gate Threshold Voltage............................................2 to 4 V
On-state Resistance.........................................0.6 Ohm (Max.)
Forward Transductance................................................1 mho
Input Capacitance............................................150 pF (Max.)
Output Capacitance...........................................100 pF (Max.)
Input and Output Capacitance calculated at 1 MHz

Specifications are typical; individual units might vary.  Specifications
are subject to change without notice.


(IR-04/08/96)