333/HO IR Emitting Diode  (276-0143C)  Specifications  Faxback Doc. # 9734

Type: ..... High power solution grown Epitaxial Gallium Arsenide IR Diodes

Absolute Maximum Ratings (25 C unless otherwise noted)

Continuous Forward Current: ........................................ 100mA
Peak Forward Current: .............................................. 1.2 A
Reverse Voltage: ...................................................... 5V
Operating Temperature Range: ................................. -40C to 85C
Storage Temperature Range: .................................. -40C to 100C
Lead Soldering Temperature (1/16" from body for 5 sec): ............. 240C
Relative Humidity at 85C: ............................................ 85%
Power Dissipation at (or below) 25C Free Air Temperature: .......... 150mW

Electrical and Radiant Characteristics (Ta = 25C)

Radiant Power (If=100mA)
     Minimum: ...................................................... 16 mW
     Maximum: ...................................................... 20 mW
Peak Emission Wavelength (If=20mA): ............................... 940 nm
Spectral Line Half-Width (If=100mA): ............................... 80 nm
Forward Voltage (If=20mA):
     Typical: ...................................................... 1.2 V
     Maximum: ...................................................... 1.6 V
Forward Voltage (If=100mA): ........................................ 1.5 V
Reverse Current (Vr=5V): ................................. 10 microA (max)
Viewing Angle to Half-Intensity: .............................. 45 degrees

Specifications are typical; individual units might vary.  Specifications
are subject to change and improvement without notice.

(TLC/all-02/27/95)